This document provides details of the USB10H MOSFET. It is a dual-channel P-Channel MOSFET with a operating voltage of 2.5V. The product is produced using Fairchild Semiconductor's PowerTrench process, which minimizes on-state resistance and gate charge for superior switching performance. It offers exceptional power dissipation in a small footprint and is suitable for applications where larger packages are impractical. Features include a maximum drain current of -1.9A, maximum drain-source voltage of -20V, low gate charge, and fast switching speed.
The document describes the Fairchild Semiconductor USB10H, a Dual P-Channel MOSFET produced using the PowerTrench process. It is designed to offer exceptional power dissipation in a small SuperSOT-6 footprint, suitable for applications like load switching and battery protection where larger packages are impractical.
The datasheet provides absolute maximum ratings, electrical characteristics including on-resistance and gate charge, and typical performance graphs. It also includes detailed mechanical drawings and tape-and-reel packaging information for the SuperSOT-6 package.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Operating Junction Temperature | -55 to +150 °C |
The maximum continuous drain current is -1.9 A.
The operating and storage junction temperature range is -55 to +150 °C.