This document describes the construction and operation of STMicroelectronics' EEPROM, and provides useful guidelines for achieving high reliability applications under some of the most stringent conditions, such as those experienced in the automotive market.
This document provides a technical overview of STMicroelectronics Serial EEPROMs, detailing the internal floating gate transistor architecture and how data is stored and retrieved. It explains the differences between erased and written states based on electron charge on the floating gate.
The guide also offers practical recommendations for designers to maximize device reliability. Topics include protection against electrostatic discharge (ESD) and electrical overstress (EOS), proper power supply sequencing, and hardware considerations for various serial bus protocols like I2C, SPI, and MICROWIRE.
EEPROM devices are used for the non-volatile storage of parameters and fine-granularity data.
The key component is the floating gate transistor, also known as a FLOTOx transistor.
As the voltage on the control gate increases, the current flowing through the drain increases in proportion.