This document is the user manual for QRD1113, QRD1114 Reflective Object Sensor, which introduces the product's features and usage methods in detail.
The QRD1113 and QRD1114 reflective object sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The sensor detects objects by measuring radiation reflected from a surface into the detector's field of view.
| Operating Temperature | -40 to +85 °C |
|---|---|
| Storage Temperature | -40 to +100 °C |
| Continuous Forward Current | 50 mA |
| Peak Emission Wavelength | 940 nm |
| Collector-Emitter Breakdown Voltage | 30 V |
The device operates between -40°C and +85°C.
The maximum continuous forward current is 50 mA.
The peak emission wavelength is 940 nm.