Fairchild MMBT3906T PNP Epitaxial Silicon Transistor Datasheet

MMBT3906T is a PNP type transistor produced by Fairchild Semiconductor. This model of transistor is suitable for general amplification, switching and power amplification, and it is complementary to the NPN model MMBT3904T.


Fairchild MMBT3906T PNP Epitaxial Silicon Transistor Datasheet - cover page
Brand
Fairchild
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
132 KB
Published
12 July, 2012
Updated
01 October, 2023
MD5 checksum
A93D06F90202576A53F96871BE705489

About this manual

This document is a technical datasheet for the Fairchild Semiconductor MMBT3906T, an NPN complementary type of the MMBT3904T. The device is designed as a general-purpose amplifier transistor suitable for portable applications due to its ultra-small surface mount package.

The datasheet provides absolute maximum ratings, electrical characteristics including DC current gain and breakdown voltages, thermal characteristics, typical performance curves, and mechanical dimensions for the SOT-523F package.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Performance Characteristics
  • Package Dimensions

Frequently asked questions

What is the maximum collector current for this transistor?

The device supports a maximum collector current of 200 mA.

What is the maximum power dissipation at room temperature?

The collector power dissipation is limited to 250 mW when the ambient temperature is 25°C.

What are the maximum voltage ratings for the collector-base and collector-emitter junctions?

Both the collector-base voltage and collector-emitter voltage have a maximum rating of -40 V.

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