The document describes the features and characteristics of Philips Semiconductors' PowerMOS transistor BUK127-50GT Logic level TOPFET. It is a monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology, assembled in a 3 pin surface mount plastic package. It has a continuous drain source voltage of 50V and a continuous drain current of 2.1A. The product is suitable for general purpose switches for driving lamps, motors, solenoids, heaters in automotive systems, and other applications.
This document is a product specification datasheet for the Philips BUK127-50GT, a logic-level PowerMOS transistor utilizing TOPFET technology. The device features monolithic temperature and overload protection, making it suitable as a general-purpose switch for driving lamps, motors, solenoids, and heaters in automotive systems.
| Continuous drain source voltage | 50 V |
|---|---|
| Continuous drain current | 2.1 A |
| Total power dissipation | 1.8 W |
| Continuous junction temperature | 150 °C |
| Drain-source on-state resistance | 200 mΩ |
The device supports a continuous drain current of up to 2.1 A and a total power dissipation of 1.8 W.
The transistor can operate with a continuous junction temperature of up to 150 °C.
When the drain-source voltage exceeds 50 V, the power MOSFET actively turns on to clamp the overvoltage.