Intersil FSS913A0D/FSS913A0R Radiation Hardened MOSFET Data Sheet

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Brand: Intersil
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 8
File format: PDF
File size: 59 KB
Published: 11 June, 2012
Updated: 30 September, 2023
MD5 checksum: 94C4E2B5630870333C657EDDA14ECFAF
PDF: Intersil FSS913A0D/FSS913A0R Radiation Hardened MOSFET Data Sheet PDF

About this manual

This document is a data sheet for the Intersil FSS913A0D and FSS913A0R, which are P-Channel power MOSFETs specifically designed for commercial and military space applications. These devices feature enhanced immunity to Single Event Effects (SEE) and Single Event Gate Rupture (SEGR), combined with a total dose hardness of 100K RADS.

What's inside

Ordering Information
Features
Absolute Maximum Ratings
Electrical Specifications
Source to Drain Diode Specifications
Single Event Effects
Screening Information
Test Circuits and Waveforms

Specifications

On Resistance	0.280 Ohm
Package	TO-257AA
Total Dose Hardness	100K RAD (Si)

Frequently asked questions

What is the on-resistance of the device?

The on-resistance is 0.280 Ohm.

Is this device suitable for space applications?

Yes, it is designed for commercial and military space applications with 100K RADS of total dose hardness.

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