This document describes the features and characteristics of the EM620FV16B series low power, low voltage 128Kx16 SRAM product.
This document is a technical datasheet for the EMLSI EM620FV16B Series, which are Low Power, 128Kx16 SRAM devices manufactured using 0.15um Full CMOS technology. The chips feature three-state outputs compatible with TTL logic and are available in various speed grades including 45ns, 55ns, and 70ns.
The datasheet provides comprehensive specifications for the device, covering absolute maximum ratings, recommended DC operating conditions, and detailed AC timing parameters for both read and write cycles. It also includes information on packaging options such as chip trays and jar packing for wafer delivery.
| Organization | 128K x 16 |
|---|---|
| Process Technology | 0.15.um Full CMOS |
| Power Supply Voltage | 2.7~3.6V |
| Low Data Retention Voltage | 1.5V |
| Operating Temperature Range | -40 to 85 °C |
| Maximum Power Dissipation | 1.0 W |
The low data retention voltage is 1.5V.
Yes, the device features three-state output and is TTL Compatible.