EM620FV16B series Low Power, 128Kx16 SRAM is a 0.15µm Full CMOS Static RAM. This product has three state output and TTL compatible, packaged product designed for 45/55/70ns.
The EM620FV16B series is a 128K × 16‑bit low‑power SRAM built on a 0.15 µm full‑CMOS process. It operates from 2.7 V to 3.6 V, offers a low data‑retention voltage of 1.5 V, and provides three‑state TTL‑compatible outputs. Typical performance includes read and write cycle times from 45 ns to 70 ns and a power dissipation of up to 1 W.
The device is supplied as a bare die with 56 bond pads and is packaged in anti‑static trays or wafer‑level jars. EMLSI recommends storing the die in a filtered‑nitrogen environment and handling it in an ESD‑safe area. Absolute‑maximum ratings and detailed timing diagrams are provided for safe design integration.
| Organization | 128K x16 |
|---|---|
| Supply voltage (Vcc) | 2.7 V – 3.6 V |
| Low data‑retention voltage | 1.5 V |
| Power dissipation (max) | 1.0 W |
| Operating temperature range | -40 °C to 85 °C |
| Input leakage current | -1 µA to 1 µA |
| Typical die thickness | 725 µm ±15 µm |
| Read cycle time (45 ns part) | 45 ns – 70 ns |
| Write cycle time (45 ns part) | 45 ns – 70 ns |
The device operates from 2.7 V to 3.6 V.
The absolute maximum power dissipation is 1.0 W.
EMLSI recommends storing the die in a controlled environment with filtered nitrogen.
Vcc may be between –0.2 V and 4.0 V relative to Vss.