This document describes the features and characteristics of the EM620FU8B low power, low voltage 256Kx8 bit static RAM.
This document is a technical datasheet for the EMLSI EM620FU8B, a Low Power, 256Kx8 SRAM manufactured by Emerging Memory & Logic Solutions Inc. The device utilizes 0.15-m Full CMOS technology and features dual chip select inputs with TTL-compatible three-state outputs.
| Organization | 256K x8 |
|---|---|
| Power Supply Voltage | 2.7~3.3V |
| Low Data Retention Voltage | 1.5V |
| Process Technology | 0.15,m Full CMOS |
| Operating Temperature | -40 to 85 °C |
The typical top-level metallization and passivation layers result in a total die thickness of approximately 725um +/-15um.
The device operates with a supply voltage between 2.7V and 3.3V.
The absolute maximum power dissipation for this device is 1.0 W.
This SRAM operates within a temperature range of -40 to 85 °C.