EM620FV16B Series Low Power, 128Kx16 SRAM. It adopts 0.15μm Full CMOS process and has an organization of 128K x16. The power supply voltage range is 2.7~3.6V, and the low data retention voltage is 1.5V. It has three-state output and TTL compatibility. Packaged product designed for 45/55/70ns.
The EM620FV16B series is a low‑power, low‑voltage 128K × 16 static RAM built on a 0.15 µm full‑CMOS process. It offers three‑state outputs, TTL compatibility, and a packaged version designed for 45 ns to 70 ns access times.
The document lists electrical characteristics such as supply voltage, leakage currents, and timing parameters, as well as physical details like die thickness and metal layers. Packaging options, storage guidelines, and absolute maximum ratings are also included to aid designers and manufacturers.
| Organization | 128K x16 |
|---|---|
| Supply voltage (Vcc) | 2.7 V – 3.6 V |
| Low data retention voltage | 1.5 V |
| Typical die thickness | 725 µm ±15 µm |
| Input leakage current | -1 µA to 1 µA |
| Operating temperature range | -40 °C to 85 °C |
| Read cycle time (typical) | 45 ns – 55 ns |
| Write cycle time (typical) | 45 ns – 55 ns |
| Maximum voltage on any pin | -0.2 V to 4.0 V |
The device operates from 2.7 V to 3.6 V.
It can be used from –40 °C up to 85 °C.
The die has a total of 56 bond pads.
Store the die in a controlled environment with filtered nitrogen and open it only in an ESD‑safe area.