The C30659-900-1060-1550nm series is a Silicon or InGaAs APD preamplifier module from PerkinElmer. It is supplied in a single modified 12-lead TO-8 package and uses the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E avalanche photodiodes to provide very good response between 830 and 1550 nanometers and very fast rise and fall times at all wavelengths. The preamplifier section uses a very low noise GaAs FET front end designed to operate at higher transimpedance than the regular C30950 series.
This document provides preliminary data for the PerkinElmer C30659 Series, which includes Silicon or InGaAs Avalanche Photodiodes with a hybrid preamplifier. The modules are supplied in single modified 12-lead TO-8 packages and feature very low noise GaAs FET front ends designed to operate at higher transimpedance than the regular C30950 series.
| System bandwidth | 50 MHz and 200 MHz |
|---|---|
| Spectral response range (Silicon APD) | 400 to 1100nm |
| Spectral response range (InGaAs APD) | 1100 to 1700nm |
| Power consumption | 150 mW typ. |
| Amplifier operating voltages | +/-5 Volts |
The module must not be DC coupled to loads of less than 2,000 Ohms.
The device operates with +/-5 Volts amplifier operating voltages.
Recovery time after overload is 250ns for a 0dBm pulse.