Aegis A5N:300.XXH Series Thyristor Datasheet

The document provides information about the voltage and power ratings of the SEMICONDUTORES LTDA. AEGIS A5N:300.XXH product.


Aegis A5N:300.XXH Series Thyristor Datasheet - cover page
Brand
Aegis
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
497 KB
Published
05 June, 2012
Updated
29 September, 2023
Model
A5N
MD5 checksum
7B168B9E2A94E1A1D4AC476A1BD10104

About this manual

This document is a technical datasheet for the Aegis A5N:300.XXH series of semiconductor devices. It provides maximum allowable ratings including junction temperature, storage temperature, average forward current (300A), and peak non-repetitive surge currents.

The datasheet also lists detailed electrical characteristics such as on-state voltage drop, latching current, holding current, and switching times (delay and turn-off). Thermal resistance values for various mounting conditions are provided alongside graphical representations of power loss and transient thermal impedance.

What's inside

  • Voltage Ratings
  • Maximum Allowable Ratings
  • Characteristics
  • Forward Power Loss Characteristics
  • Gate Trigger Characteristics
  • Outline Characteristics

Specifications

Max. Av. current300 A
Nom. RMS current470 A
Max. Peak non-rep. surge current (60 Hz)5.70 kA
Latching current400 mA
Holding current500 mA
Turn-off time (tq)400 us
Peak gate current150 mA
Mounting Force450 N.m
Case StyleTO-200AA JEDEC

Frequently asked questions

What is the maximum junction temperature?

The maximum allowable junction temperature (Tj) ranges from -40 to 125°C.

What is the peak on-state voltage?

The typical peak on-state voltage (Vtm) is 1.93 V.

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