Key facts
- Brand
- Aegis
- Model
- A5N
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-05
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Aegis A5N:300.XXH Series Thyristor Datasheet
This document is a technical datasheet for the Aegis A5N:300.XXH series of semiconductor devices. It provides maximum allowable ratings including junction temperature, storage temperature, average forward current (300A), and peak non-repetitive surge currents.
The datasheet also lists detailed electrical characteristics such as on-state voltage drop, latching current, holding current, and switching times (delay and turn-off). Thermal resistance values for various mounting conditions are provided alongside graphical representations of power loss and transient thermal impedance.
Aegis A5N specifications
| Max. Av. current | 300 A |
|---|---|
| Nom. RMS current | 470 A |
| Max. Peak non-rep. surge current (60 Hz) | 5.70 kA |
| Latching current | 400 mA |
| Holding current | 500 mA |
| Turn-off time (tq) | 400 us |
| Peak gate current | 150 mA |
| Mounting Force | 450 N.m |
| Case Style | TO-200AA JEDEC |
All Aegis A5N documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum allowable junction temperature (Tj) ranges from -40 to 125°C.
What is the peak on-state voltage?
The typical peak on-state voltage (Vtm) is 1.93 V.
What is the maximum average current rating?
The device can handle a maximum average current of 1000 A.
What is the peak non‑repetitive surge current?
The peak non‑repetitive surge current is 14 000 A for a 50 Hz half‑cycle sine wave.