The document provides the maximum allowable ratings of AEGIS A5N:1000.XXH, including maximum average current, maximum peak non-repetitive surge current, maximum I2t, maximum I2t1/2, maximum mounting force, maximum average gate power, maximum peak gate current, maximum negative gate voltage, rated RMS current, maximum non-repetitive rate-of-rise current, maximum peak gate power, maximum non-repetitive peak reverse voltage and maximum repetitive peak reverse voltage.
The Aegis A5N:1000.XXH is a high‑current semiconductor component with detailed voltage, current, and thermal ratings. The document provides absolute maximum ratings, typical operating parameters, and characteristic curves for on‑state voltage, gate behavior, and thermal impedance.
Key data include junction temperature limits, peak surge currents, gate power limits, and mechanical specifications such as mounting force and case style. Graphs illustrate forward voltage drop and transient thermal impedance across various waveforms.
| Junction Temperature Range | -40 to 125 °C |
|---|---|
| Storage Temperature Range | -40 to 150 °C |
| Maximum Average Current | 1000 A |
| Peak Non‑Repetitive Surge Current | 14000 A (50 Hz half‑cycle sine wave) |
| Peak Gate Power | 200 W |
| Peak Gate Current | 10 A |
| Mounting Force | 24500 N ±10 % |
| Case Style | TO‑200AD (JEDEC) |
| Weight | 460 g |
The device can handle a maximum average current of 1000 A.
The peak non‑repetitive surge current is 14 000 A for a 50 Hz half‑cycle sine wave.
The component uses a TO‑200AD JEDEC case style.
The maximum allowable case temperature is 130 °C.