MMBTA92LT1 is a high voltage PNP type transistor produced by ONSEMI. Its main parameters are: rated collector-emitter voltage VCEO is -300Vdc, rated collector-base voltage VCBO is -300Vdc, rated emitter-base voltage VEBO is -5.0Vdc, and rated collector current IC is -500mAdc.
The MMBTA92LT1 is a high‑voltage PNP silicon transistor designed for switching applications. It offers a collector‑emitter voltage of –300 V, collector‑base voltage of –300 V, and an emitter‑base voltage of –5 V, with a continuous collector current of 500 mA.
The device is supplied in a SOT‑23 (TO‑236AF) case 318‑08, with detailed thermal ratings such as a junction‑to‑ambient resistance of 417 °C/W. Ordering information, package dimensions, and tape‑and‑reel options are provided in the datasheet.
| Collector‑Emitter Voltage | -300 V |
|---|---|
| Collector‑Base Voltage | -300 V |
| Emitter‑Base Voltage | -5.0 V |
| Continuous Collector Current | 500 mA |
| Total Device Dissipation (FR‑5) | 225 mW |
| Thermal Resistance, Junction‑to‑Ambient | 417 °C/W |
The maximum collector‑emitter voltage is –300 V.
The device can handle a continuous collector current of 500 mA.
The junction‑to‑ambient thermal resistance is 417 °C/W.