Key facts
- Manuals
- 3
- Last added
- 2012-06-04
Latest HYNIK manuals
HYNIK HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM
The HY57V561620T is a 268,435,456-bit CMOS Synchronous DRAM, ideally suited for main memory applications that require large memory density and high bandwidth. It is organized as 4 banks of 4,194,304 x 16 and offers fully synchronous operation with internally pipelined design for high bandwidth. It supports programmable options including CAS latency, burst length, and burst count sequence.
HYNIK HY29F080 8 Megabit (1M x 8) 5 Volt-only Flash Memory
HY29F080 is an 8 Megabit (1M x 8) 5 Volt-only flash memory. It features 5 Volt read, program, and erase operations, high performance with access times as fast as 70 ns, low power consumption, and compatibility with JEDEC standards. It supports sector erase architecture, erase suspend/resume, sector group protection, and more.
HYNIK HY27US(08/16)281A Series 128Mbit (16Mx8bit 8Mx16bit) NAND Flash
This document describes the features and characteristics of the HY27US(08/16)281A series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash.