This document describes the features and characteristics of the DTC043 series digital transistors produced by ROHM, including built-in resistors, easy device design, and NPN structure.
The DTC043TM is a 100 mA/50 V NPN digital transistor that includes built‑in thin‑film bias resistors, allowing inverter circuits to be built without external resistors. The device offers isolation for negative biasing and minimizes parasitic effects, simplifying circuit design.
The datasheet lists packaging options (VMT3, EMT3F, UMT3F), absolute maximum ratings, electrical characteristics such as breakdown voltages, collector current, power dissipation, and transition frequency. Typical applications include inverter, interface, and driver circuits.
| Collector‑Base breakdown voltage (V CBO) | 50 V |
|---|---|
| Collector‑Emitter breakdown voltage (V CEO) | 50 V |
| Emitter‑Base breakdown voltage (V EBO) | 5 V |
| Maximum collector current (I C) | 100 mA |
| Power dissipation (P D) | 150 mW (typ.) |
| Junction temperature (T J) | 150 °C |
| Storage temperature range (T stg) | -55 °C to +150 °C |
| Transition frequency (f T) | 250 MHz |
| Input resistance (R in) | 47 kΩ (typ.) |
The device includes built‑in bias resistors that enable inverter circuit configuration without connecting external input resistors.
The collector‑base and collector‑emitter breakdown voltages are 50 V, and the emitter‑base breakdown voltage is 5 V.
The transistor is rated for a collector current of 100 mA.
Typical applications include inverter, interface, and driver circuits.