This document describes the features and characteristics of the DTC114T series NPN digital transistors produced by ROHM. The transistors in this series have built-in bias resistors, which enable the configuration of an inverter circuit without connecting external input resistors. The bias resistors are made of thin-film resistors with complete isolation, allowing for negative biasing of the input and eliminating parasitic effects. Only the on/off conditions need to be set for operation, making circuit design easy. The document also introduces the complementary PNP types and complex types of this series of transistors.
The DTC114TE is a NPN digital transistor featuring built‑in bias resistors, allowing simple inverter or switching circuit designs without external resistors. It is RoHS‑compliant and offered in several SOT package types.
Key specifications include a collector‑base voltage of 50 V, collector‑emitter voltage of 50 V, emitter‑base voltage of 5 V, and a maximum collector current of 100 mA. The datasheet also lists mechanical dimensions for each package and typical electrical characteristics such as input resistance and transition frequency.
| Collector‑base voltage | 50 V |
|---|---|
| Collector‑emitter voltage | 50 V |
| Emitter‑base voltage | 5 V |
| Collector current | 100 mA |
| Power dissipation (DTC114TEB) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Input resistance (typical) | 10 kΩ |
The maximum collector current is 100 mA.
It can be used in switching circuits, inverter circuits, interface circuits, and driver circuits.
The device is available in SOT‑416 (SC‑75A), SOT‑323 (SC‑70), and SOT‑346 (SC‑59) packages.