SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.
The SIR-320ST3F is a GaAs infrared light‑emitting diode packaged in clear plastic. Its high luminous efficiency and 940 nm wavelength make it suitable for silicon detector applications and compact optical‑control equipment.
Key specifications include a typical optical output of 9.0 mW at 50 mA forward current, a wide radiation angle of ±18°, and a compact φ3.1 mm package. Absolute maximum ratings cover operating temperatures from –25 °C to +85 °C and storage temperatures from –40 °C to +85 °C, with a forward voltage of about 3 V.
| Optical output power | 9.0 mW (IF=50 mA) |
|---|---|
| Radiation angle | ±18° |
| Forward current (typical) | 50 mA |
| Package diameter | φ3.1 mm |
At a forward current of 50 mA, the LED produces about 9.0 mW of optical power.
The LED has a wide radiation angle of ±18 degrees.