The SIR-341ST3F is a GaAs infrared light emitting diode suitable for compact optical control equipment. It has high efficiency, high output, wide radiation angle, and a 940nm peak wavelength suitable for silicon detectors.
The SIR-341ST3F is a GaAs infrared light‑emitting diode packaged in clear plastic, offering a 940 nm peak wavelength and a wide radiation angle for compact optical control equipment. It is designed for use in remote‑control devices and other optical control applications.
Key specifications include a forward current rating of 75 mA, reverse voltage of 5 V, typical optical output of 8.4 mW at 50 mA, and an operating temperature range of –25 °C to +85 °C. The device also features a half‑viewing angle of +16°, a response time of 1.0 ps, and a cut‑off frequency of 1.0 MHz.
| Forward current (IF) | 75 mA |
|---|---|
| Reverse voltage (VA) | 5 V |
| Power dissipation (Po) | 100 mW |
| Pulse forward current (Irf) | 500 mA |
| Operating temperature (Topr) | -25 °C to +85 °C |
| Storage temperature (Tstg) | -40 °C to +85 °C |
| Typical optical output (Po) at 50 mA | 8.4 mW |
The absolute maximum forward current is 75 mA.
Typical optical output is 8.4 mW at a forward current of 50 mA.
It operates from –25 °C to +85 °C.