The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.
The SIR-34ST3F infrared light‑emitting diode is a clear‑plastic GaAs device designed for optical control equipment and remote‑control light sources. It offers high luminous efficiency, a 950 nm spectrum suited to silicon detectors, and a compact 3.1 mm size.
Key specifications include a peak optical output of 8 mW at 50 mA, forward current rating of 100 mA, reverse voltage up to 5 V, and an operating temperature range of –25 °C to +85 °C. The LED provides a wide 27° half‑viewing angle and reliable long‑life performance.
| Peak optical output (Po) | 8.0 mW at Ir = 50 mA |
|---|---|
| Forward current (If) | 100 mA |
| Reverse voltage (Vr) | 5 V |
| Power dissipation (Pd) | 160 mW |
| Operating temperature | -25 °C to +85 °C |
The forward voltage is between 1.3 V and 1.6 V at 100 mA.
The device can tolerate up to 5 V reverse voltage.
It delivers a peak optical output of 8 mW when driven at 50 mA.