The SSH15N60 and SSH15N55 are N‑channel power MOSFETs offering low on‑resistance, fast switching, and high‑temperature reliability.
The datasheet provides key ratings such as drain‑source voltage, continuous drain current, gate charge, and thermal resistance, together with typical output and transfer characteristic curves.
| Drain‑Source Voltage (Vds) | 600 V (SSH15N60) / 550 V (SSH15N55) |
|---|---|
| Gate‑Source Voltage (Vgs) | ~20 V |
| Total Power Dissipation at 25 °C | 230 W |
| Junction‑to‑Case Thermal Resistance | 0.55 K/W |
| Input Capacitance (Ciss) | 4417 pF |
| Output Capacitance (Coss) | 738 pF |
| Turn‑On Delay Time | 130 ns |
| Rise Time | 280 ns |
| Total Gate Charge (Qg) | 160 nC |
The SSH15N60 is rated for 600 V and the SSH15N55 for 550 V.
The maximum power dissipation is 230 W at 25 °C.
The gate threshold voltage ranges from 2.0 V to 45 V.