This document describes the Toshiba TLP206A gallium‑arsenide infrared emitting diode optically coupled to a photo‑MOS FET. It includes the pin configuration, maximum ratings, recommended operating conditions, and detailed electrical characteristics for both individual and coupled parameters.
The datasheet also outlines isolation specifications, switching performance, and restrictions on product use, helping designers ensure safe and reliable integration of the TLP206A in electronic applications.
| Peak Off‑State Voltage | 60 V (MIN) |
|---|---|
| On‑State Current | 400 mA (MAX) |
| On‑State Resistance | < 20 Ω (MAX) |
| Isolation Voltage | 1500 V rms (MIN) |
| Forward Current (Ip) | 50 mA |
| Pulse Forward Current (Irp) | 1 A |
| Reverse Voltage (VR) | 5 V |
| Junction Temperature (Tj) | 125 °C |
| Operating Temperature Range | -40 °C to 85 °C |
| Weight | 0.2 g |
The TLP206A is rated for a peak off‑state voltage of 60 V minimum.
The isolation voltage is specified as 1500 V rms minimum.
The recommended supply voltage can be up to 48 V.
The device is intended to operate between –40 °C and 85 °C.