The Sony SLD322V laser diode is a gain‑guided, high‑power device produced by MOCVD method. It delivers a recommended optical output of 0.5 W at a low operating current of 0.75 A and features a GaAlAs quantum‑well structure.
The document provides electrical and optical characteristics, absolute maximum ratings, pin configuration, handling precautions, and temperature‑dependent performance data, along with a package outline for the M‑248 (LO‑11) form factor.
| Recommended optical power output | 0.5 W |
|---|---|
| Operating current (low) | 0.75 A |
| Maximum optical power output | 0.55 W |
| Reverse voltage | 2 V |
| Operating temperature range | -10 °C to +30 °C |
| Storage temperature range | -40 °C to +85 °C |
| Threshold current (Ith) | 0.18 A – 0.3 A |
| Operating voltage (Vop) | 2.1 V – 3.0 V |
| Wavelength range | 790 nm – 840 nm |
| Differential efficiency (nD) | 0.5 W/A – 0.9 W/A |
The recommended optical power output is 0.5 W.
An operating current of 0.75 A is required for a 0.5 W output.
The diode operates between 790 nm and 840 nm.
The reverse voltage rating is 2 V.