IRFBC30AS/L is a MOSFET produced by irf, with an rated voltage of 600v and a rated current of 3.6a. It has the characteristics of low gate charge, high speed switching and so on.
The IRFBC30AS/L is a HEXFET power MOSFET designed for high‑voltage SMPS, UPS, and high‑speed switching applications. It offers low gate charge for simple drive, improved avalanche and dv/dt ruggedness, and fully characterized capacitance.
Key specifications include a 600 V drain‑to‑source breakdown voltage, 3.6 A continuous drain current at 25 °C, 74 W power dissipation, and a TO‑262 (D?Pak) package with detailed footprint and tape‑and‑reel information.
| Drain‑to‑Source Breakdown Voltage (VDS) | 600 V |
|---|---|
| Pulsed Drain Current (ID(pulse)) | 14 A |
| Power Dissipation (PD) | 74 W |
| Total Gate Charge (Qg) | 23 nC |
| Input Capacitance (Ciss) | 510 pF |
| Output Capacitance (Coss) | 70 pF |
| Single Pulse Avalanche Energy (EAS) | 290 mJ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.7 °C·W |
The IRFBC30AS/L can withstand up to 600 V drain‑to‑source voltage.
The device is supplied in a TO‑262 (D?Pak) package.
The MOSFET can handle a single pulse avalanche energy of 290 mJ.