Introduction to the characteristics and applications of Schottky diodes
The document introduces Schottky barrier diodes, highlighting their fast switching speed, low forward voltage drop, and reduced voltage overshoot compared with conventional pn‑junction diodes. It also discusses the disadvantages such as limited high‑temperature operation, higher leakage, and lower breakdown voltage for silicon devices.
Design considerations are covered in detail, including operating temperature margins, heat‑sink thermal resistance, die size, Tjmax class selection, and voltage class. The guide further describes the performance of Taiwan Semiconductor’s super‑fast diodes (1 A–30 A, up to 600 V, 35 ns reverse recovery) and provides guidance on selecting and applying transient voltage suppressor (TVS) devices.
| Forward current range | 1 A to 30 A |
|---|---|
| Maximum blocking voltage | 600 V |
| Reverse recovery time | 35 ns |
| Maximum operating temperature (axial lead) | 175 °C |
| Maximum operating temperature (surface mount) | 150 °C |
They switch faster than comparable pn‑junction diodes, have a very low forward voltage drop, and produce much less voltage overshoot during turn‑on.
A higher Tjmax class allows a higher heat‑sink temperature, which can reduce the required heat‑sink size, but the higher temperature may be unsuitable for other components mounted on the same sink.
The super‑fast diodes have a reverse recovery time of about 35 ns.