TSM1N60L is a N-channel power MOSFET for high voltage, high speed switching applications in power supplies, converters and PWM motor controls. This device is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical.
The TSM1N60L MOSFET is designed for high‑voltage, high‑speed switching applications such as power supplies, converters and PWM motor controls. It features an advanced termination scheme for enhanced voltage‑blocking capability and a fast‑recovery drain‑to‑source diode.
Key specifications include a 600 V drain‑source rating, +30 V gate‑source rating, 2.5 W maximum power dissipation at 25 °C, and a junction‑to‑ambient thermal resistance of 62.5 °C/W. The device complies with RoHS and is offered in TO‑252 and TO‑251 packages.
| Drain-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-Source Voltage (VGS) | +30 V |
| Maximum Power Dissipation | 2.5 W |
| Operating Junction Temperature | +150 °C |
| Junction-to-Ambient Thermal Resistance | 62.5 °C/W |
The device can withstand up to 600 V between drain and source.
It is rated for operation from –55 °C to +150 °C.
The maximum power dissipation is 2.5 W at a junction temperature of 25 °C.