This document is about Si6426DQ, a 20V N-Channel PowerTrench MOSFET with low RDS(ON), high voltage, high reliability, etc., which can be applied to battery protection, DC/DC conversion, power management and other fields
The Si6426DQ is a rugged N‑Channel PowerTrench MOSFET designed for power‑management applications such as battery protection, DC‑DC conversion, load switching and other high‑current uses. It offers a wide gate‑drive voltage range (2.5 V to 8 V) and a low‑profile TSSOP‑8 package.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and thermal data, along with product status and trademark information. It is intended for designers needing detailed specifications for circuit implementation.
| Drain‑Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate‑Source Voltage (V_GS) | 8 V |
| Continuous Drain Current (I_D) | 5.4 A |
| Power Dissipation (P_D) | 1.4 W |
| On‑Resistance (R_DS(on)) | 35 mΩ @ V_DS=4.5 V |
| Package | TSSOP‑8 |
The Si6426DQ can withstand up to 20 V between drain and source.
It is rated for a continuous drain current of 5.4 A.
Typical on‑resistance is 35 mΩ at a drain‑source voltage of 4.5 V.
The MOSFET is supplied in a low‑profile TSSOP‑8 package.