The 16k Nonvolatile SRAM features 10-years minimum data retention in the absence of external power and automatically protects data during power loss. It directly replaces 2k x 8 volatile static RAM or EEPROM and has unlimited write cycles.
The DS1220Y 16k Nonvolatile SRAM provides 16,384 bits of fully static memory organized as 2048 × 8 bits. It includes a self‑contained lithium energy source that automatically switches on and write‑protects the device when VCC drops, ensuring data retention for at least ten years without external power. The part fits a standard 24‑pin DIP package and can replace 2 k × 8 volatile SRAMs or compatible EPROM/EEPROM devices.
Electrical specifications include a 4.5 V to 5.5 V supply range, 100 ns access time, unlimited write cycles, and operation over a commercial temperature range of 0 °C to 70 °C (industrial –40 °C to +85 °C). Detailed pin assignments, read/write timing diagrams, and power‑down/up behavior are provided for designers.
| Memory size | 16,384 bits (2048 × 8) |
|---|---|
| Data retention | 10 years minimum |
| Write protection voltage | 4.25 V |
| Operating temperature (commercial) | 0 °C to 70 °C |
| Operating temperature (industrial) | -40 °C to +85 °C |
| Supply voltage | 4.5 V to 5.5 V |
| Input leakage current | -1 pA to +1 pA |
| Package | 24‑pin DIP, 720‑mil extended |
| Write cycles | Unlimited |
It has a built‑in lithium backup that automatically switches on and write‑protects the memory when VCC falls, keeping data retained for at least ten years.
The recommended supply voltage is 4.5 V to 5.5 V; a logic‑1 is recognized above 2.2 V and a logic‑0 below 0.8 V.
The industrial (IND) version operates from –40 °C up to +85 °C.
It provides 11 address inputs, labeled A0 through A10.