The STK12C68 is a 64Kb fast static RAM with a non-volatile Quantum Trap storage element included in each memory cell. It features fast access and cycle times, unlimited read/write endurance, automatic non-volatile storage on power loss, non-volatile storage under hardware or software control, automatic data recall to SRAM on power up, unlimited recall cycles, 1 million store cycles, 100-year non-volatile data retention, single 5V ± 10% power supply, commercial, industrial, and military temperature ranges, and various package options. It is the first monolithic non-volatile memory to offer unlimited writes and reads, making it the highest performance and most reliable non-volatile memory available.
The STK12C68 nvSRAM provides high‑speed SRAM performance with a built‑in quantum‑trap non‑volatile element for each memory cell. Key features include 25‑55 ns read/write cycles, unlimited read/write endurance, automatic non‑volatile STORE on power loss, and software‑controlled STORE/RECALL operations.
The device operates in standard SRAM mode or non‑volatile mode, with dedicated hardware and software sequences for STORE and RECALL. It is supplied in 28‑pin SOIC, DIP and LCC packages, supports a 5 V ±10% supply, and retains data for up to 100 years without power.
| Read/Write Cycle Time | 25‑55 ns |
|---|---|
| Power Supply | 5 V ±10 % |
| Storage Temperature Range | –65 °C to 150 °C |
| Non‑volatile Data Retention | 100 years |
| Read/Write Endurance | Unlimited |
It operates from a single 5 V supply with a tolerance of ±10 %.
The non‑volatile storage retains data for up to 100 years without power.
Read and write access times range from 25 ns to 55 ns depending on the speed grade.