This document describes the features and characteristics of the Microchip Technology Inc. 25LC512 serial EEPROM memory, including maximum clock speed, byte and page-level write operations, low-power CMOS technology, electronic signature, self-timed erase and write cycles, sector write protection, built-in write protection, high reliability, etc.
The 25LC512 is a 512‑Kbit Serial EEPROM that interfaces via a standard SPI bus. It supports byte‑ and page‑level write operations, sector and chip erase functions, and includes write‑protect and hold pins for flexible system integration. Key features include a 20 MHz maximum clock speed, low‑power CMOS technology, and RoHS‑compliant packaging.
Electrical specifications cover a 2.5‑5.5 V supply range, 5 mA write current, 10 mA read current, and a standby current of 1 µA in deep‑power‑down mode. The device is rated for 1 million write/erase cycles, >200‑year data retention, and >4000 V ESD protection. It operates from –40 °C to +85 °C (industrial) or –40 °C to +125 °C (automotive) and is available in 8‑lead PDIP, SOIC and DFN packages.
| Memory Capacity | 512 Kbit |
|---|---|
| Page Size | 128 Byte |
| Maximum Clock Speed | 20 MHz |
| Write Current (5.5 V, 20 MHz) | 5 mA |
| Read Current (5.5 V, 20 MHz) | 10 mA |
| Standby Current (Deep Power‑Down) | 1 µA at 2.5 V |
| Endurance | 1 Million erase/write cycles |
| Data Retention | >200 years |
| ESD Protection | >4000 V |
| Industrial Temperature Range | -40 °C to +85 °C |
| Automotive Temperature Range | -40 °C to +125 °C |
| Package Types | 8‑lead PDIP, SOIC, DFN |
The device supports a maximum clock speed of 20 MHz.
It is rated for 1 million erase/write cycles.
The EEPROM is offered in 8‑lead PDIP, SOIC and DFN packages.
Industrial range is –40 °C to +85 °C; automotive range is –40 °C to +125 °C.