AT28C64B is a high-performance electrically-erasable and programmable read- only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 µA. The AT28C64B is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle,
The AT28C64B is a 64‑Kbit parallel EEPROM with byte‑wide organization (8,192 × 8). It offers fast 150 ns read access, low power consumption, and optional data‑protection features. The device can be accessed like a static RAM and supports page‑write operations of up to 64 bytes.
The document provides detailed pin configurations for PDIP, SOIC, TSOP and PLCC packages, timing diagrams for AC read/write cycles, electrical characteristics, operating temperature ranges, and both hardware and software write‑protect mechanisms. Contact information for Atmel worldwide locations is also included.
| Fast Read Access Time | 150 ns |
|---|---|
| Page Write Cycle Time (Standard) | 10 ms maximum |
| Page Write Cycle Time (Option) | 2 ms maximum |
| Active Current | 40 mA |
| Standby Current (CMOS) | 100 pA |
| Supply Voltage | 5 V ±10 % |
| Commercial Operating Temperature | 0 °C to 70 °C |
| Industrial Operating Temperature | -40 °C to 85 °C |
| Endurance | 100,000 cycles |
| Data Retention | 10 years |
| Extra EEPROM for Identification | 64 bytes |
The standard page‑write cycle time is up to 10 ms, while an optional mode can achieve 2 ms.
The CMOS standby current is less than 100 pA.
An additional 64 bytes of EEPROM can be used for device identification.