This document provides technical information and characteristics of the FS100R12KT3 IGBT module. The module features a maximum collector-emitter voltage of 1200V, a maximum DC collector current of 140A at 80°C, and a maximum repetitive peak collector current of 200A. Additionally, characteristic values such as collector-emitter saturation voltage, gate threshold voltage, and gate charge are provided. The module is suitable for applications such as IGBT inverters.
This datasheet provides the electrical specifications, thermal parameters, and mechanical dimensions of the Eupec FS100R12KT3 IGBT module. It includes maximum rated values such as collector‑emitter voltage, continuous current, and power dissipation, as well as characteristic curves for switching behavior.
The document also contains insulation test voltages, package outline dimensions, and a circuit diagram. Terms and conditions for usage are listed at the end, indicating that the data is intended for technically experienced staff. This manual is written in German.
| Collector‑Emitter Voltage (Vces) | 1200 V |
|---|---|
| Continuous Collector Current (Ic) | 100 A |
| Peak Repetitive Collector Current | 200 A (1 ms pulse) |
| Total Power Dissipation (Prot) | 480 W |
| Gate‑Emitter Peak Voltage (Voes) | +20 V |
| Input Capacitance | 7.10 nF |
| Reverse Transfer Capacitance | 0.30 nF |
| Thermal Resistance (junction‑to‑case, IGBT) | 0.26 K·W⁻¹ |
| Maximum Junction Temperature | 150 °C |
| Package Weight | 300 g |
The module is rated for a collector‑emitter voltage of 1200 V.
It can carry a continuous collector current of 100 A.
The junction‑to‑case thermal resistance is 0.26 K·W⁻¹.