BB 620 is a silicon variable capacitance diode
This document details the specifications of the Siemens BB 620 silicon variable capacitance diode, including its maximum ratings, electrical characteristics, and package outlines. It is intended for designers and engineers who need precise diode parameters for TV/VTR tuner applications.
Key sections cover reverse voltage, forward current, temperature ranges, thermal resistance, and detailed capacitance values at different bias voltages. Package information such as pin configuration and ordering codes is also provided.
| Reverse voltage (Vr) | 30 V |
|---|---|
| Forward current (Ir) | 20 mA |
| Operating temperature range (Top) | -55 °C to +125 °C |
| Storage temperature range (Tsig) | -55 °C to +150 °C |
| Junction‑to‑ambient thermal resistance (Rinsa) | < 450 K·W⁻¹ |
| Reverse current (typical) at 30 V | 10 nA |
| Capacitance (Cr) at Va = 1 V | 62 – 76 pF |
| Capacitance (Cr) at Va = 28 V | 2.9 – 3.4 pF |
| Capacitance ratio (cn) | 19.5 – 25 |
| Series resistance (rs) | 1.3 Ω |
| Series inductance (Ls) | 2.8 nH |
The diode can withstand up to 30 V reverse voltage.
The forward current rating is 20 mA.
It operates from –55 °C to +125 °C.
At 1 V the capacitance is 62‑76 pF, and at 28 V it is 2.9‑3.4 pF.