TIP122F and TIP127F are NPN and PNP silicon power Darlington transistors, designed for general purpose amplifier and low-speed switching applications.
The TIP122F (NPN) and TIP127F (PNP) are silicon power Darlington transistors designed for general‑purpose amplifier and low‑speed switching applications. They are supplied in a fully isolated TO‑220FP plastic package.
The sheet lists absolute maximum ratings, thermal resistance values, and detailed electrical characteristics such as collector‑emitter voltage, continuous collector current, and power dissipation. Packaging and shipping details are also provided.
| Collector‑Base Voltage (VCBO) | 100 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 100 V |
| Emitter‑Base Voltage (VEBO) | 5.0 V |
| Continuous Collector Current (IC) | 5.0 A |
| Peak Collector Current (ICM) | 8.0 A |
| Base Current (IB) | 120 mA |
| Total Power Dissipation (PD) | 65 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -65 to +150 °C |
| Thermal Resistance Junction‑to‑Ambient (Rth(j‑a)) | 62.5 °C/W |
| Thermal Resistance Junction‑to‑Case (Rth(j‑c)) | 1.92 °C/W |
The maximum collector‑emitter voltage is 100 V.
The device can handle a continuous collector current of 5.0 A.
They are supplied in a TO‑220FP fully isolated plastic package.
The storage temperature range is –65 °C to +150 °C.