This is a data sheet for NPN/PNP silicon power Darlington transistors, including absolute maximum ratings, electrical characteristics, etc.
The CDIL datasheet provides the absolute maximum ratings, electrical characteristics, and thermal specifications for the TIP122F NPN and TIP127F PNP silicon power Darlington transistors. These devices are designed for general‑purpose amplifier and low‑speed switching applications.
Package details, pin configuration, and packaging dimensions are also listed, along with customer notes and disclaimer information from Continental Device India Limited.
| Collector‑Base Voltage (Vcbo) | 100 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 100 V |
| Emitter‑Base Voltage (Vebo) | 5.0 V |
| Continuous Collector Current (Ic) | 5.0 A |
| Peak Collector Current (Icm) | 8.0 A |
| Base Current (Ib) | 120 mA |
| Total Power Dissipation (PD) | 65 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -65 to +150 °C |
| Thermal Resistance Junction‑to‑Ambient (Rth(j‑a)) | 62.5 °C/W |
The maximum collector‑emitter voltage is 100 V.
The devices can handle a continuous collector current of 5.0 A.
The total power dissipation is rated at 65 W.
They can be stored from –65 °C up to +150 °C.