MAT01 is a matched monolithic dual NPN transistor from Analog Devices. It features low VOS (VBE match), low TCVOS, high hFE, excellent hFE linearity, low noise voltage, and high breakdown.
The MAT01 is a monolithic dual NPN transistor featuring a proprietary silicon‑nitride triple‑passivation process that delivers excellent stability of offset voltage, low noise and high gain over a wide current range. It is intended for low‑power, low‑level input stages where precise matching and low drift are required.
The document lists detailed electrical characteristics such as a 45 V breakdown voltage, typical offset voltage of 0.04 mV, current gain of 590 at 10 nA, and low‑frequency noise of 0.23 µV p‑p (0.1‑10 Hz). Absolute maximum ratings, ordering options, ESD handling guidelines and test circuit examples are also included.
| Low‑Frequency Noise Voltage | 0.23 µV p‑p (0.1‑10 Hz) |
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The substrate is connected to the case.
Yes, it is an ESD‑sensitive device, though it includes proprietary ESD protection circuitry.