This document provides the absolute maximum ratings and electrical characteristics of the FJP5027 NPN silicon transistor. It features a collector-base voltage of up to 1100V, collector-emitter voltage of 800V, and collector current of 3A. Additionally, it provides other parameters such as collector-base breakdown voltage, emitter-base breakdown voltage, and collector-emitter sustaining voltage.
The FJP502 is a high‑voltage, high‑reliability NPN silicon transistor presented in a TO‑220 package. The datasheet lists its absolute maximum ratings, electrical characteristics, and typical performance curves.
Key information includes voltage ratings up to 1100 V, collector currents up to 10 A (pulse), and a power dissipation of 50 W. Package dimensions and trademark notices are also provided.
| Collector‑Base Voltage (Vcbo) | 1100 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 800 V |
| Emitter‑Base Voltage (Vebo) | 7 V |
| Collector Current (DC) | 3 A |
| Collector Current (Pulse) | 10 A |
| Base Current (Ib) | 1.5 A |
| Power Dissipation (Pd) | 50 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to 150 °C |
The maximum collector‑emitter voltage is 800 V.
The device can dissipate up to 50 W when the case temperature is 25 °C.