This document introduces the features and characteristics of the RF/microwave integrated amplifier series HE575A/HEM575A. The amplifier has wide bandwidth, stable gain, and good impedance matching, making it suitable for applications in the frequency range of 10 to 3000MHz. The product adopts a microwave thin-film circuit structure, which ensures stable and reliable performance, and meets the military temperature working conditions. Precautions should be taken to prevent electrostatic discharge during use, and different packaging options are available.
The HBM HE575A/HEM575A is an integrated broadband amplifier covering a frequency range of 10 MHz to 3 GHz. It provides a typical small‑signal gain of 12 dB, low noise figure around 3 dB, and good impedance matching with input VSWR of 2.0:1 and output VSWR of 2.0:1.4.
The manual includes performance parameters, typical gain curves, recommended PCB layout, and handling precautions such as static protection. Installation dimensions and mounting instructions are provided, along with electrical connection details for SMA‑type interfaces. This manual is written in Japanese.
| Frequency Range | 10 MHz – 3000 MHz |
|---|---|
| Noise Figure | 3.0 dB |
| Input VSWR | 2.0:1 |
| Maximum Input Power | 15 dBm |
| Output Power | 15.04 dBm |
| Operating Temperature | -55 °C to +85 °C |
| Storage Temperature (max) | +125 °C |
It operates from 10 MHz up to 3000 MHz.
It can operate from –55 °C to +85 °C.