MMC Manuals

HE382B-1/HEM382B-1 integrated broadband amplifier has a frequency range of 20～1000MHz, a low noise of 1.4dB (typical value), a large dynamic range of 18.5dBm (typical value), good 50Ω impedance matching, easy to cascade, microwave thin-film circuit structure, stable and reliable electrical performance, and standard full-sealed metal tube housing packaging. It meets military temperature working conditions of -55℃～+85℃

HE316 integrated broadband amplifier, frequency range 3~50MHz, gain 11dB (typical value), IP3 (out): 32dBm (typical value), large dynamic: 1dB compression output 20dBm, thin film circuit structure, stable and reliable electrical performance.

This document introduces the features and characteristics of the RF/microwave integrated amplifier series, including frequency range, temperature compensation, impedance matching, and stable and reliable electrical performance.

HE313 is a wideband amplifier produced by Hebei Microwave Electrical Appliance Co., Ltd. The main features are a frequency range of 1 to 100 MHz, a gain of 28 dB (typical value), IP3 (out) of 30 dBm (typical value), and a large dynamic of 1 dB compression output of 17 dBm (typical value). The standard all-sealed TO-8F metal tube shell is used for packaging.

This document introduces the features and characteristics of the RF/microwave integrated amplifier series HE382B/HEM382B, including frequency range, impedance matching, stable and reliable electrical performance, etc. This integrated amplifier has the function of a wideband amplifier and is suitable for military working conditions.

HE387D/HEM387D integrated wideband amplifier is a high-efficiency, large-dynamic RF/microwave integrated amplifier with a working frequency range of 100-700MHz. It uses an active bias design to provide temperature compensation, good 50Ω impedance matching, and is easy to cascade. It uses a standard hermetic metal tube shell package that meets military temperature operating conditions: -55℃~+85℃

HE387B/HEM387B/HES387B integrated broadband amplifier, frequency range: 20 ~ 400MHz, with active bias design provides temperature compensation, good 50Ω impedance matching, easy to cascade, microwave thin film circuit structure, stable and reliable electrical performance, using standard fully sealed tube shell packaging, meet military working conditions: -55℃ ~ +85℃.

This document introduces the electrical performance table and instructions for the RF/Microwave Integrated Amplifier Series product HE388D-6. The series products have features such as wide frequency range, high gain, low noise, and stable and reliable electrical performance.

This document describes the features and characteristics of the HE311/HEM311 integrated broadband amplifier. The product has a wide frequency range, high output power, good 50Ω impedance matching, and stable and reliable electrical performance. It adopts a microwave thin-film circuit structure, suitable for military temperature working conditions, and is easy to cascade use.

HE390B integrated broadband amplifier performance table, including frequency range, gain, noise figure, input return loss, output return loss, linear output power, working current, appearance size, installation and use methods

HE387A/HEM387A/HES387A integrated broadband amplifier is a temperature-compensated active bias design, with good 50Ω impedance matching and easy cascading. It features a stable and reliable microwave thin-film circuit structure and a standard hermetically sealed tube shell. It meets military temperature working conditions: -55℃～+85℃.

The HE315 is a RF/Microwave integrated amplifier produced by HBMMC. It has a frequency range of 1-110MHz, an gain of 20dB, an IP3(out) of 40dBm, and a 1dB compression output of 27dBm.

This document introduces the features and characteristics of the RF/microwave integrated amplifier series HE575A/HEM575A. The amplifier has wide bandwidth, stable gain, and good impedance matching, making it suitable for applications in the frequency range of 10 to 3000MHz. The product adopts a microwave thin-film circuit structure, which ensures stable and reliable performance, and meets the military temperature working conditions. Precautions should be taken to prevent electrostatic discharge during use, and different packaging options are available.