TLP351 is an 8PIN DIP package optocoupler consisting of GaAlAs infrared emitting diode and high-gain, high-speed receiving IC chip. It is suitable for gate drive of IGBT and power MOS FET. Its features include output peak current of ±0.6A, operating temperature range of -40 to 100℃, supply current of 2mA, power supply voltage of 10 to 30V, input threshold current of IF=5mA, transmission delay time of 700ns, instantaneous common mode rejection voltage of 10kV/μs, insulation withstand voltage of 3750Vrms, etc.
The TLP351 is a GaAs infrared LED and high‑gain, high‑speed phototransistor packaged in an 8‑pin DIP. It is intended for gate‑drive applications such as IGBT and power MOSFET drivers and can drive both sink and source configurations.
The document lists absolute maximum ratings, recommended operating conditions, electrical and isolation characteristics, and switching parameters, along with application notes for safe and reliable use in industrial and consumer electronics. This manual is written in Japanese.
| Supply voltage | 10‑30 V |
|---|---|
| Isolation voltage | 3750 Vrms |
| Transfer delay time | 700 ns (max) |
| Input supply current | 2 mA (max) |
| Operating temperature range | -40 °C to 100 °C |
The device is specified for a supply voltage of 10 V to 30 V.
The maximum isolation voltage is 3750 Vrms.
It can operate from –40 °C up to 100 °C.