TLP350F is an 8PIN DIP optocoupler produced by Toshiba. It combines GaAℓAs infrared emitting diode and high-gain, high-speed integrated circuit light-receiving chip. It is suitable for gate driving of IGBT and power MOS FET. It features a peak output current of 2.5A, operating temperature range of -40 to 100℃, supply current of 2mA, power supply voltage of 15 to 30V, response speed of 500ns, instantaneous common mode transient immunity of 15kV/μs, insulation withstand voltage of 3750Vrms, etc.
The TLP350F is an 8‑pin DIP optocoupler that combines a GaAs infrared LED with a high‑gain, high‑speed integrated phototransistor. It is intended for gate‑drive applications such as IGBT and power MOSFET drivers, as well as inverter and induction‑heating circuits.
The document includes absolute maximum ratings, electrical specifications, pin‑out diagrams, truth tables, and safety notices, including UL1577 and VDE certifications, and guidance on handling and prohibited uses. This manual is written in Japanese.
| Output peak current | 2.5 A (max) |
|---|---|
| Supply current | 2 mA (max) |
| Supply voltage | 15‑30 V |
| Input threshold current | 5 mA (max) |
| Response speed | 500 ns (max) |
| Isolation voltage | 3750 Vrms (min) |
| UL certification | UL1577 |
| VDE certification | DIN EN60747-5-2 |
| Maximum operating insulation voltage | 1140 Vpk |
| Maximum overvoltage | 6000 Vpk |
The TLP350F can source a peak output current of up to 2.5 A.
It has a minimum isolation voltage rating of 3750 Vrms.
The device operates with a supply voltage between 15 V and 30 V.
Yes, it complies with UL1577.