2SC5198 is a silicon NPN triple diffused type power amplifier transistor produced by Toshiba. Its features are high voltage, VCEO=140V (min.), and it is a complementary tube with 2SA1941. It is suitable for 70W high fidelity audio amplifier output stages.
The 2SC5198 is a silicon NPN triple‑diffused power transistor designed for high‑power audio amplifier output stages and other high‑current applications. It offers a collector‑base voltage of 140 V and can handle continuous collector currents up to 10 A.
The document lists absolute maximum ratings, safe operating area limits, and RoHS compliance information, and includes handling recommendations to ensure reliable operation within the specified temperature range of –55 °C to 150 °C. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 140 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 140 V |
| Maximum Collector Current (Ic) | 10 A |
| Power Dissipation (Pc) | 100 W |
| Maximum Junction Temperature (Tj) | 150 °C |
The maximum collector‑emitter voltage is 140 V.
It can handle up to 10 A of continuous collector current.
Yes, the device is RoHS compliant; contact Toshiba sales for detailed information.
The transistor is rated for operation from –55 °C up to 150 °C.