2SA970 is a PNP low-frequency low-noise transistor with low noise index at low signal source impedance, low pulse noise, and high S/N ratio for applications such as EQ amplifier front stage.
The 2SA970 is a PNP low‑frequency, low‑noise transistor designed for applications such as equalizer pre‑amplifier stages in stereo and tape‑deck equipment. It offers high current gain, low pulse noise, and high voltage ratings.
The datasheet provides electrical characteristics, maximum ratings, h‑parameter data, and handling guidelines, including temperature limits and safety notices for semiconductor use. This manual is written in Japanese.
| Collector‑Base Voltage (VcBo) | -120 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | -120 V |
| Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Current Gain (hFE) | 200‑700 |
| Noise Figure (NF) at 1 kHz | 0.5 dB (standard) |
The collector‑emitter voltage rating is -120 V.
The typical current gain ranges from 200 to 700.
The junction temperature should not exceed 125 °C, and the storage temperature range is –55 °C to 125 °C.
The noise figure is 0.5 dB (standard) at 1 kHz with RG = 1 kΩ, Vcg = ‑6 V, Io = ‑0.1 mA.