The 2SC5109 is a silicon NPN epitaxial planar transistor produced by Toshiba. Its maximum collector voltage is 20V, maximum collector-emitter voltage is 10V, maximum emitter-base voltage is 3V, maximum collector current is 60mA, maximum base current is 30mA, and maximum collector loss is 150mW. The junction temperature is 125°C and the storage temperature is -55~125°C.
The 2SC5109 is a silicon NPN epitaxial planar transistor designed for VHF/UHF oscillator applications. It is intended for use in general electronic equipment such as computers, measurement devices, and industrial robots.
The document lists key electrical specifications, including voltage ratings, current limits, power dissipation, capacitances, transition frequency, and S‑parameter data, together with handling and safety recommendations for reliable circuit design. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 20 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 10 V |
| Base‑Emitter Voltage (Vebo) | 3 V |
| Collector Current (Ic) | 60 mA |
| Emitter Current (Ie) | 30 mA |
| Power Dissipation (Pd) | 150 mW |
| Operating Temperature Range | -55 °C to 125 °C |
| Collector‑Base Capacitance (Cob) | 0.9 pF |
| Return Capacitance (Cre) | 0.7–1.1 pF |
The maximum collector‑base voltage is 20 V.
It is rated for operation from –55 °C up to 125 °C.