This document describes three models of Toshiba's PNP transistors, which are suitable for switching, inverter, interface, and driver circuits. These transistors have built-in bias resistors, which can reduce the number of components, achieve device miniaturization, and simplify assembly. In addition, they offer various resistance values to accommodate different circuit designs.
The RN2707JE, RN2708JE, and RN2709JE are silicon PNP epitaxial transistors offered by Toshiba. They are designed for switching, inverter, interface, and driver circuits and feature an integrated bias resistor to reduce part count and enable compact designs.
These devices are provided in an Extreme Super Mini (5‑pin) package and are available as complementary pairs. The datasheet lists absolute maximum ratings, electrical characteristics such as collector‑base voltage, collector‑emitter voltage, transition frequency, and typical bias resistor values for each part. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Power Dissipation (Pc) | 100 mW |
Yes, RN2707JE and RN2709JE are complementary devices.
They are supplied in an Extreme Super Mini (5‑pin) package.