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The 20N65C3 is a 650V, 20.7A new revolutionary high voltage MOS power transistor. It features ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
This datasheet introduces the characteristics parameters of TLP260J, including the maximum ratings, maximum peak, maximum nonrepetitive surge current, package size, trigger LED current, package type, pin diagram, pin numbering, weight and so on
TLP2601 is a photocoupler that combines a GaAℓAs IRed as the emitter and an integrated high gain, high-speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector, providing an effective common mode transient immunity of 1000V/µs.
TLP2530, TLP2531 are TOSHIBA company's photocouplers, using GaAℓAs light-emitting diodes and integrated photodetectors, with TTL compatibility, fast switching speed, can be used for digital logic isolation, line reception, power control, switching power supply, transistor switching, etc.
This data sheet provides detailed information about the SN74GTLPH1612 18-BIT LVTTL-TO-GTL+ ADJUSTABLE-EDGE-RATE UNIVERSAL BUS TRANSCEIVER, including features, pins, package, and applications.
The SN74BCT2423A, SN74BCT2424A is a 16-bit latched multiplexer/demultiplexer bus transceiver with the following features: Multiplexed real-time and latched data, Byte control for byte-write applications, Useful in NuBus interface applications, Useful in Memory Interleave Applications, BiCMOS design substantially reduces standby current, Dependable Texas Instruments Quality and Reliability.
ROHM's BD48xxx and BD49xxx series are highly accurate, low current consumption reset IC series. The devices are available for specific detection voltages ranging from 2.3V to 6.0V in increments of 0.1V.
TLP2530 and TLP2531 are dual photocouplers from TOSHIBA, consisting of a pair of GaAℓAs light emitting diodes and integrated photodetectors. This unit is an 8-lead DIP package. The speed is improved up to a hundred times that of a conventional phototransistor coupler by reducing the base-collector capacitance. It is TTL compatible, has fast switching speed, guaranteed performance over a wide temperature range, high isolation voltage, and is UL recognized.