Industrial

The 54VCXH162373 is a low voltage CMOS 16 bit d-type latch with 3 state outputs non inverting fabricated with sub-micron silicon gate and five- layer metal wiring C²MOS technology. It is ideal for low power and very high speed 1.65 to 3.6 V applications; it can be interfaced to 3.6 V signal environment for both inputs and outputs. These 16 bit D-type latches are bite controlled by two latch enable inputs (nLE) and two output enable inputs (OE). When nLE input is high, the latch will keep at its current state, when nLE input is low, the latch will go from low level to high level or from high level to low level, depending on the state of the OE input.

This is a low voltage CMOS 16-bit D-type flip-flop (3-state) with radiation hardened features and 3.6V tolerant inputs and outputs. It features high speed, symmetrical impedance outputs, power down protection on inputs and outputs, 26Ω series resistors in outputs, etc.

RHFL7913A is a high performance Rad hard negative voltage regulator from ST company, providing 3A low dropout voltage, optional overtemperature and overcurrent protection, adjustable overcurrent limitation, load short circuit monitoring, adjustable output voltage, inhibit (ON/OFF) TTL-compatible control, programmable output short-circuit current limitation, remote sensing operation, suitable for space and harsh radiation environments

The RHF1201 is a 12-bit 50Msps sampling frequency analog-to-digital converter that uses pure (ELDRS-free) CMOS 0.25µm technology combining high performance, radiation robustness and very low power consumption.

This datasheet introduces the features of the 14-bit 30MspsRad-hardA/D converter RHF1401, including functions, applications, performances, and external dimensions.

The RHF43B is a high radiation immunity precision bipolar single operational amplifier. It features high radiation immunity, rail-to-rail output, 8 MHz gain bandwidth, low input offset voltage, etc.

The 2N2219AHR is a Hi-Rel NPN bipolar transistor with linear gain characteristics, designed for high-reliability applications such as aerospace.

2N2905AHR is a high-reliability PNP bipolar transistor with linear gain characteristics. It is ESCC qualified and designed for aerospace Hi-Rel applications.

The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification.

The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications.

2N3019HR is a high-reliability NPN bipolar transistor with linear gain characteristics and ESCC qualification. It is specifically designed for aerospace applications. It has a BVCEO of 80V and a maximum IC of 1A.

2N3810HR is a dual matched PNP transistor released by ST. This transistor has high reliability, linear gain characteristics, ESCC certification, etc., and is suitable for aerospace and other high reliability applications.

The document describes the features of the 2N5153HR high-reliability PNP bipolar transistor, including linear gain characteristics, ESCC qualification, European preferred part list (EPPL), and radiation level.

The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification.