Industrial

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.

The EM783-SC/SP/TP/MC3/MC6 is an ARM Cortex-M0-based, low-cost 32-bit family of application processors, designed for energy measurement and monitoring applications. The EM783 offers programmability and on-chip metrology functionality combined with a low power, simple instruction set. It also has memory addressing together with reduced code size compared to existing 8/16-bit architectures.

The LM75B can be configured for different operation conditions. It can be set in normal mode to periodically monitor the ambient temperature, or in shutdown mode to minimize power consumption. The OS output operates in either of two selectable modes:OS comparator mode or OS interrupt mode. Its active state can be selected as either HIGH or LOW. The fault queue that defines the number of consecutive faults in order to activate the OS output is programmable as well as the set-point limits.

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.