Diotec Manuals

DD 300…DD 1800 Fast Switching High Voltage Si-Rectifiers are highly reliable semiconductor devices which are used in circuits to achieve DC. These devices are characterized by high reliability, high temperature stability, low RON and low power consumption.

This datasheet provides the maximum ratings and electrical characteristics of the BRSB-500-1C silicon bridge rectifier.

This document introduces the Silizium Schutzgleichrichter products of the BYZ series, which have features such as high temperature, high current, and TVS characteristics.

The BAV18 is a silicon planar diode with a repetitive peak reverse voltage of 50~200V, a maximum average forward rectified current of 250mA, a maximum periodic peak reverse voltage of 50~200V, a maximum peak reverse voltage of 60~250V, a maximum power dissipation of 500mW, and a maximum forward surge current of 1A and 5A. The package is available in DO-35 and SOD-27.

The document describes the features and characteristics of the 3EZ 1 to 3EZ 200 series of silicon power Zener diodes. These diodes are manufactured using non-planar technology and have a maximum power dissipation of 3W and nominal Zener voltages ranging from 1V to 200V. They come in a standard packaging format taped in an ammo pack.

BYP 35A05-6 BYP 35K05-6 series is a high temperature silicon rectifier diode produced by BI Technologies of Germany. The rated current is 35A and the rated reverse peak voltage is 50-600V. It is packaged in a metal press-fit case with UL94V-0 flame retardant grade and has an external dimension of 4x4x2.3mm.

SDA4AK is a bidirectional clamping diode from SIEMENS with a nominal current of 1 A, plastic case MELF DO-213AB, weight approx. 0.12 g, plastic material UL 94V-0 class.

uf 600a is an ultrafast switching silicon rectifier produced by littelfuse company. it has a rated current of 6a, a rated reverse peak voltage of 50-1000v, a plastic case of p-600 style, a weight of about 1.5g, and an ul94v-0 certification. the standard packaging is taped in ammo pack

This is an English document about ZPD 1…ZPD 75 (0.5 W) silicon planar Zener diodes.

This document is a mechanical specification of a 5 Amp Silicon Bridge Rectifier, which mainly introduces the appearance, terminal configuration, soldering requirements, polarity marking, mounting position, weight, etc. of the product.

ZMM series 500mW silicon planar diodes, with SOD-80 small glass package, maximum power dissipation 500mW, temperature resistance -50-175℃, with 2% tolerance and 5% tolerance.

ZMM 1, ZMM 100 are surface mount silicon planar Zener diodes with a maximum power dissipation of 500 mW. They have a nominal Z-voltage of 1-100 V and are housed in a MiniMELF SOD-80 glass case. They weigh approximately 0.05g and are standardly supplied on a reel.

1.5 SMCJ 6.5...170CA Surface Mount Unidirectional and bidirectional Transient Voltage Suppressor Diodes technical specifications.

This document describes the features and characteristics of ZPY 1 to ZPY 200 (1.3W) silicon power Zener diodes, including maximum power dissipation, nominal Zener voltage, plastic case, weight, standard packaging, etc.